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Same model may have multiple batches, images only for reference.
IXTK200N10L2 Real Image
Same model may have multiple batches, images only for reference.

IXTK200N10L2

Part No IXTK200N10L2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 200A TO264  /  N-Channel 100 V 200A (Tc) 1040W (Tc) Through Hole TO-264 (IXTK)
Datasheet
IXTK200N10L2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series Linear L2™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 540 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 23000 pF @ 25 V
Power Dissipation (Max) 1040W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-264 (IXTK)
Package / Case TO-264-3, TO-264AA
Base Product Number IXTK200
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names Q7017004
Standard Package 25
Win Source Part Number 1188638-IXTK200N10L2
Ultra Librarian 3D Model Ultra Librarian IXTK200N10L2 CAD Model

Description

IXTK200N10L2 is a high-performance N-channel MOSFET transistor manufactured by IXYS.

  • Drain to Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 200A (Tc)
  • Operating Temperature: -55°C to 150°C

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