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SUM90100E-GE3

Part No SUM90100E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL 200-V (D-S) MOSFET D2P / N-Channel 200 V 150A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay Siliconix
Series TrenchFET®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 11.4mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3930 pF @ 100 V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D2Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1352496-SUM90100E-GE3
Ultra Librarian 3D Model Ultra Librarian SUM90100E-GE3 CAD Model

Description

The SUM90100E-GE3 is a single N-channel MOSFET from Vishay Siliconix. It belongs to the TrenchFET® series, known for its high performance and reliability.

  • Drain-to-Source Voltage: 200V
  • Continuous Drain Current: 150A @ 25°C
  • On-Resistance: 11.4mOhm @ 10V gate-source voltage and 16A drain current
  • Gate Threshold Voltage: 4V @ 250µA drain current
  • Gate Charge: 110nC @ 10V gate-source voltage
  • Mounting Type: Surface Mount
  • Package Type: TO-263-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.6028 $50.4252
22+ $4.5972 $101.1384
34+ $4.4535 $151.4190
47+ $4.3099 $202.5653
61+ $4.1662 $254.1382
81+ $3.7352 $302.5512
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Availability: 1,327 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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