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SUM90N08-4M8P-E3

Part No SUM90N08-4M8P-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 90A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Cut Reel
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 160nC @ 10V
Max Input Capacitance 6460pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.75W (Ta), 300W (Tc)
Maximum Rds On at Id,Vgs 4.8 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263 (D2Pak)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 141371-SUM90N08-4M8P-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SUM90N08-4M8P-E3 CAD Model

Description

The Vishay SUM90N08-4M8P-E3 is an N-channel MOSFET with a maximum drain-source breakdown voltage of 75V and a continuous drain current of 90A @ 25°C.

  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On at Id, Vgs: 4.8 mOhm @ 20A, 10V
  • Suitable for: surface-mount technology (SMT) applications
  • Supplied in: cut reel packaging
  • Popularity: high
  • Supply and Demand Status: balanced
  • Status: obsolete (EOL)
  • Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.5714 $50.1426
22+ $4.5715 $100.5730
34+ $4.4286 $150.5724
47+ $4.2857 $201.4279
61+ $4.1429 $252.7169
81+ $3.7143 $300.8583
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,600 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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