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SUP40010EL-GE3

Part No SUP40010EL-GE3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET N-CH 40V 120A TO220AB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Vishay Siliconix
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 1.8mOhm at 30A, 10V
Vgs(th) (Maximum) at Id 2.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 230nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 11155pF at 30V
Power Dissipation (Maximum) 375W (Tc)
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 812391-SUP40010EL-GE3
Ultra Librarian 3D Model Ultra Librarian SUP40010EL-GE3 CAD Model

Description

The Vishay Siliconix SUP40010EL-GE3 is an N-channel MOSFET with a drain to source voltage (Vdss) of 40V.

  • Mounting: Through-hole
  • Package: TO-220AB
  • Drive Voltage: 4.5V (max Rds On), 10V (min Rds On)
  • Power Dissipation: 375W (Tc)
  • Continuous Drain Current: 120A @ 25°C
  • Gate Charge: 230nC @ 10V
  • Input Capacitance: 11155pF @ 30V
  • Vgs(th): 2.5V @ 250μA
  • Maximum Vgs: ±20V
  • Series: SUP40010EL-GE3
  • Manufacturer Pack Quantity: 50

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Pricing & Ordering

Quantity Unit Price Ext. Price
26+ $1.9670 $51.1420
62+ $1.6140 $100.0680
96+ $1.5636 $150.1056
133+ $1.5131 $201.2423
171+ $1.4627 $250.1217
229+ $1.3114 $300.3106
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 50 pieces
MOQ: 26 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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