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SUP70N03

Part No SUP70N03
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 70A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 19nC @ 5V
Max Input Capacitance 1500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 93W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 057021-SUP70N03
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SUP70N03 CAD Model

Description

The Vishay MOSFET is a N-Channel polarity discrete semiconductor product that has a drain-source breakdown voltage of 30V and a maximum gate-source voltage of ±20V.

  • Drain-Source Breakdown Voltage: 30V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds on @ Id, Vgs: 9 mOhm @ 30A, 10V
  • Continuous Drain Current @ 25°C: 70A (Tc)
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 19nC @ 5V
  • Package: TO-220AB
  • Operating Temperature Range: -55°C to 175°C
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5140 $59.1100
275+ $0.4216 $115.9400
425+ $0.4089 $173.7825
585+ $0.3962 $231.7770
760+ $0.3823 $290.5480
1,015+ $0.3430 $348.1450
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 55,000 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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