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Same model may have multiple batches, images only for reference.
SUP85N10-10-E3 Real Image
Same model may have multiple batches, images only for reference.

SUP85N10-10-E3

Part No SUP85N10-10-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 85A TO220AB
Datasheet
SUP85N10-10-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Cut Reel
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 160nC @ 10V
Max Input Capacitance 6550pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.75W (Ta), 250W (Tc)
Maximum Rds On at Id,Vgs 10.5 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 133857-SUP85N10-10-E3
Popularity Medium
Supply and Demand Status Limited
Quantity per package 500
Ultra Librarian 3D Model Ultra Librarian SUP85N10-10-E3 CAD Model

Description

The Vishay SUP85N10-10-E3 is a N-Channel MOSFET with a maximum power dissipation of 3.75W (Ta), 250W (Tc).

  • Product Type: discrete semiconductor
  • Package: TO-220AB
  • Dimension: TO-220-3
  • Drive Voltage: 4.5V, 10V
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 85A (Tc)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 160nC @ 10V
  • Maximum Input Capacitance: 6550pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 10.5 mOhm @ 30A, 10V
  • Common Application: industrial

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43+ $2.3704 $101.9272
66+ $2.2963 $151.5558
90+ $2.2223 $200.0070
117+ $2.1482 $251.3394
156+ $1.9260 $300.4560
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