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Same model may have multiple batches, images only for reference.
SUU06N10-225L
Same model may have multiple batches, images only for reference.

SUU06N10-225L

Part No SUU06N10-225L
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 100V 6.5A 3-Pin(3+Tab) TO-251
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 6.5 A
Drain to Source Breakdown Voltage 100 V
Drain to Source Resistance 200 mΩ
Drain to Source Voltage (Vdss) 100 V
Element Configuration Single
Fall Time 9 ns
Gate to Source Voltage (Vgs) 20 V
Maximum Operating Temperature 150 °C
Max Power Dissipation 20 W
Min Operating Temperature -55 °C
Mount Through Hole
Number of Pins 3
Power Dissipation 20 W
Radiation Hardening No
Rise Time 8 ns
RoHS Non-Compliant
Turn-Off Delay Time 8 ns
Turn-On Delay Time 7 ns
Weight 3.949996 g
Win Source Part Number 965490-SUU06N10-225L
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SUU06N10-225L CAD Model

Description

The Vishay SUU06N10-225L is an N-channel MOSFET with a drain-source voltage of 100V and a continuous drain current of 6.5A.

  • Channel Type: N-Channel
  • Drain-Source Voltage: 100V
  • Continuous Drain Current: 6.5A
  • Maximum Power Dissipation: 20W
  • Gate-Source Voltage: 20V
  • Turn-On Delay Time: 7ns
  • Turn-Off Delay Time: 8ns
  • Mounting: Through Hole
  • Weight: 3.949996g
  • Application: Transistors - FETs, MOSFETs - RF

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