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SY3443BDV-T1-E3

Part No SY3443BDV-T1-E3
Manufacturer Vishay
Catalog HOT - SALES and EOL Components (S)
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Manufacturer Vishay
Win Source Part Number 350403-SY3443BDV-T1-E3
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SY3443BDV-T1-E3 CAD Model

Description

The SY3443BDV-T1-E3 is a P-Channel -20 V (Vgs) MOSFET manufactured by Vishay. This MOSFET is designed for a variety of power management and switching applications where efficiency and low on-resistance are critical. It is offered in a PowerPAK® SC-70 package, providing excellent thermal performance in a compact footprint.

Applications

  • Load Switching: Used to efficiently switch power to various loads in portable devices and systems.
  • Power Management in Portable Devices: Ideal for battery management and power distribution in smartphones, tablets, and laptops.
  • DC-DC Conversion: Can be used in DC-DC converters to regulate voltage levels efficiently.
  • Battery Protection: Implemented in battery protection circuits to prevent over-charging and over-discharging.

Features

  • Low On-Resistance (RDS(on)): Features a low RDS(on) which minimizes power loss and improves efficiency.
  • Low Threshold Voltage (VGS(th)): A low threshold voltage allows the MOSFET to be easily driven by low voltage logic.
  • Fast Switching Speed: Enables efficient switching in high-frequency applications.
  • PowerPAK® SC-70 Package: A small, surface-mount package that provides excellent thermal performance.
  • Halogen-Free and RoHS Compliant: Environmentally friendly, meeting industry standards for hazardous substance reduction.

Benefits

  • Increased Efficiency: The low RDS(on) significantly reduces power dissipation, leading to higher efficiency in power management circuits.
  • Compact Design: The PowerPAK® SC-70 package allows for a smaller footprint, enabling more compact designs.
  • Extended Battery Life: Reduced power loss translates to longer battery life in portable applications.
  • Simplified Driving Circuitry: Low threshold voltage simplifies the driving requirements, reducing the complexity of the control circuit.
  • Improved Thermal Performance: The package design facilitates efficient heat dissipation, improving reliability.

Additional Details

The SY3443BDV-T1-E3 has a drain-source voltage (VDS) of -20V and a gate-source voltage (VGS) of ±12V. At VGS = -4.5V, RDS(on) is typically 50 mΩ. It's crucial to consult the official Vishay datasheet for precise operating conditions, thermal resistance values, and other critical design parameters. This MOSFET is designed to operate within a specific temperature range; exceeding these limits can impact performance and longevity. This component is typically reflow soldered onto PCBs. Storage conditions should also be carefully observed to prevent degradation of solderability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.6818 $51.1350
180+ $0.5595 $100.7100
280+ $0.5420 $151.7600
385+ $0.5245 $201.9325
495+ $0.5070 $250.9650
660+ $0.4546 $300.0360
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,700 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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