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TN0200K-T1-E3

Part No TN0200K-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Cut Reel
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 50μA
Max Gate Charge 2nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 350mW (Ta)
Maximum Rds On at Id,Vgs 400 mOhm @ 600mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 033311-TN0200K-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TN0200K-T1-E3 CAD Model

Description

The TN0200K-T1-E3 is a P-Channel MOSFET from Vishay Semiconductors designed for low voltage, high-speed switching applications. This MOSFET is known for its low on-resistance (RDS(on)) and fast switching times, making it suitable for power management and load switching in portable devices and other battery-powered systems. Its compact package allows for high-density circuit designs.

Applications

  • Load Switching
  • Power Management
  • DC-DC Converters
  • Portable Devices
  • Battery-Powered Systems

Features

  • Low On-Resistance (RDS(on)): Minimizes power loss and improves efficiency.
  • Fast Switching Speed: Reduces switching losses and improves circuit performance.
  • Small Package Size: Allows for high-density circuit designs.
  • Low Threshold Voltage: Enables operation at low voltage levels.
  • Halogen-Free: Compliant with environmental standards.

Benefits

  • High Efficiency: Low RDS(on) reduces power dissipation and extends battery life.
  • Improved Performance: Fast switching characteristics allow for use in demanding applications.
  • Compact Design: Small footprint enables miniaturization of electronic devices.
  • Low Voltage Operation: Suitable for battery-powered and low-voltage systems.
  • Environmentally Friendly: Halogen-free construction contributes to a more sustainable product.

Additional Details

The TN0200K-T1-E3 typically features a drain-source voltage (VDS) rating of around -20V and a continuous drain current (ID) rating of approximately -0.2A. The RDS(on) is typically in the milliohm range, contributing to its low power loss. It is commonly available in a small surface-mount package such as SOT-23. The gate threshold voltage (VGS(th)) is low, typically around -0.45V to -1.0V, enabling operation at low voltage levels. Its fast switching characteristics and low on-resistance make it well-suited for applications where efficiency and performance are critical. Proper thermal management is essential to ensure optimal performance and longevity, especially at higher current levels. Detailed specifications should be consulted to ensure the device is operated within its rated limits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4366 $50.2090
280+ $0.3583 $100.3240
435+ $0.3471 $150.9885
600+ $0.3359 $201.5400
770+ $0.3247 $250.0190
1,035+ $0.2911 $301.2885
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,773 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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