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WPM2006

Part No WPM2006
Manufacturer Willsemi
Catalog HOT - SALES and EOL Components (U - Z)
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer WILLSEMI
Win Source Part Number 403019-WPM2006
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian WPM2006 CAD Model

Description

The WPM2006 is a P-Channel enhancement mode MOSFET manufactured by Willsemi, designed for load switch and power management applications, particularly in portable devices. This MOSFET features a low on-resistance which contributes to efficient power usage and reduced heat dissipation.

Applications:

  • Load Switching: For efficient power distribution control.
  • Portable Devices: Ideal for smartphones, tablets, and other battery-operated electronics.
  • Power Management Systems: DC-DC converters and voltage regulators.
  • Battery Management: Overcharge and discharge protection circuits.
  • Solid State Relays: Used to switch loads on and off.

Features:

  • P-Channel Enhancement Mode: Simplified gate drive requirements.
  • Low On-Resistance (RDS(on)): Reduced power loss and improved efficiency.
  • Low Gate Charge (Qg): Faster switching and reduced power consumption.
  • Small Footprint: Available in compact packages for space-saving designs.
  • High Avalanche Energy: Robust performance in demanding applications.
  • Lead-Free and RoHS Compliant: Environmentally friendly construction.

Benefits:

  • Improved Efficiency: Minimizes power dissipation and enhances overall efficiency.
  • Extended Battery Life: Lower power loss in portable devices leads to longer operation.
  • Simplified Circuit Design: P-Channel configuration simplifies driver circuit design.
  • Compact Solution: Small package size enables integration in space-constrained environments.
  • Enhanced Reliability: Robust design ensures dependable performance.
  • Environmentally Friendly: Compliant with environmental regulations.

Additional Details:

The WPM2006 typically comes in a SOT-23 or similar package. Important specifications include drain-source voltage (VDS), gate-source voltage (VGS), continuous drain current (ID), and operating temperature range. Consult the datasheet for precise values and application recommendations. The gate threshold voltage (VGS(th)) is also a critical parameter. This MOSFET is suited for low-side switching applications where efficient and reliable power control is required. Its low RDS(on) characteristic is a key advantage for reducing voltage drop and power losses in load switching applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
570+ $0.1016 $57.9120
1,390+ $0.0832 $115.6480
2,145+ $0.0809 $173.5305
2,945+ $0.0785 $231.1825
3,850+ $0.0751 $289.1350
5,085+ $0.0681 $346.2885
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,640 pieces
MOQ: 570 pcs
Order Increment : 1 pcs
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