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AP28G45EM

Part No AP28G45EM
Manufacturer Advanced Power Electronics Corp.
Catalog Hard To Find
Description N-CHANNEL INSULATED GATE
Sample
Rohs State rohs
ECAD Module
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Manufacturer Advanced Power Electronics Corp.
Win Source Part Number 1145602-AP28G45EM
Manufacturer Homepage www.a-power.com.tw
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AP28G45EM CAD Model

Description

The AP28G45EM is a Trench MOSFET from Advanced Power Electronics Corp (APEC). It is designed for high-efficiency power conversion in various applications. With its low on-resistance and fast switching capability, this MOSFET is ideal for synchronous rectification and DC-DC conversion.

Applications:

      
  • Synchronous rectification
  •   
  • DC-DC converters
  •   
  • Power adapters
  •   
  • Battery chargers
  •   
  • LED lighting

Features:

      
  • Low on-resistance (RDS(on))
  •   
  • Fast switching speed
  •   
  • High avalanche energy
  •   
  • RoHS compliant
  •   
  • Optimized for synchronous rectification

Benefits:

      
  • Increased power efficiency
  •   
  • Reduced power losses
  •   
  • Improved thermal performance
  •   
  • Enhanced system reliability
  •   
  • Environmentally friendly

Additional Details:

The AP28G45EM typically features an RDS(on) of around 9 mΩ at VGS = 10V and ID = 20A. It's designed to handle a continuous drain current (ID) of up to 60A. This MOSFET is commonly available in a TO-252 package, which offers a good balance between thermal performance and footprint. The gate charge (Qg) is relatively low, which contributes to faster switching speeds and reduced switching losses.

The thermal resistance from junction to case (RthJC) is a key parameter for determining the device's power dissipation capability. Detailed specifications, including the drain-source voltage (VDS), gate-source voltage (VGS), and operating temperature range, can be found in the manufacturer's datasheet.

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