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Same model may have multiple batches, images only for reference.
IRF6637TRPBF
Same model may have multiple batches, images only for reference.

IRF6637TRPBF

Part No IRF6637TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 14A DIRECTFET
Datasheet
IRF6637TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 14A (Ta), 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 250μA
Max Gate Charge 17nC @ 4.5V
Max Input Capacitance 1330pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.3W (Ta), 42W (Tc)
Maximum Rds On at Id,Vgs 7.7 mOhm @ 14A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MP
Dimension DirectFET Isometric MP
Win Source Part Number 116498-IRF6637TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF6637TRPBF CAD Model

Description

The supply and demand status is balanced.

  • Product: MOSFET transistor that is designed for use in power management applications
  • Maximum Power Dissipation: 2.3W (Ta), 42W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Package: DirectFET Isometric MP package
  • Maximum Rds On @ Id,Vgs: 7.7 mOhm @ 14A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.5717 $60.0285
250+ $0.4689 $117.2250
385+ $0.4551 $175.2135
525+ $0.4401 $231.0525
680+ $0.4250 $289.0000
910+ $0.3812 $346.8920
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Availability: 9,449 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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