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IRF5810TRPBF

Part No IRF5810TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 2.9A 6-TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.9A
Maximum Rds On at Id,Vgs 90 mOhm @ 2.9A, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 9.6nC @ 4.5V
Max Input Capacitance 650pF @ 16V
Maximum Power Dissipation 960mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 100133-IRF5810TRPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian IRF5810TRPBF CAD Model

Description

The Infineon Technologies IRF5810TRPBF MOSFET is a dual P-channel power transistor with a maximum drain-source breakdown voltage of 20V and a maximum continuous drain current of 2.9A at 25°C.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current (25°C): 2.9A @ 25°C
  • Maximum Power Dissipation: 960mW
  • Case/Package: 6-TSOP package
  • Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3280 $59.0400
430+ $0.2691 $115.7130
665+ $0.2610 $173.5650
915+ $0.2529 $231.4035
1,185+ $0.2437 $288.7845
1,590+ $0.2183 $347.0970
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 46,182 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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