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APT12045L2VFR

Part No APT12045L2VFR
Manufacturer Advanced Power Technology
Catalog Hard To Find
Description POWER MOS V
Sample
Rohs State rohs
ECAD Module
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Manufacturer Advanced Power Technology
Win Source Part Number 1146599-APT12045L2VFR
Manufacturer Homepage www.advpowertech.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian APT12045L2VFR CAD Model

Description

The APT12045L2VFR is a 1200V, 45A SiC MOSFET from Microsemi (formerly Advanced Power Technology). It's designed for high-efficiency, high-frequency power switching applications.

Applications

  • Solar Inverters: Used in solar power inverters to improve efficiency and reduce size.
  • EV Chargers: Employed in electric vehicle (EV) chargers for fast and efficient charging.
  • Uninterruptible Power Supplies (UPS): Suitable for high-power UPS systems.
  • Motor Drives: Used in industrial motor drives to improve efficiency and reduce harmonic distortion.
  • Welding Power Supplies: Utilized in high-frequency welding power supplies.

Features

  • SiC MOSFET: Silicon Carbide MOSFET for superior performance compared to traditional silicon MOSFETs.
  • 1200V Blocking Voltage: High voltage rating for demanding applications.
  • Low On-Resistance (RDS(on)): Minimizes conduction losses, increasing efficiency.
  • Fast Switching Speed: Enables high-frequency operation with reduced switching losses.
  • Avalanche Ruggedness: Withstands avalanche breakdown conditions, enhancing reliability.
  • Low Gate Charge: Reduces gate drive power requirements.

Benefits

  • High Efficiency: SiC technology minimizes power losses, maximizing efficiency.
  • Reduced System Size: High-frequency operation allows for smaller passive components.
  • Improved Reliability: Avalanche ruggedness ensures robust performance.
  • Simplified Cooling: Lower losses reduce heat generation, simplifying thermal management.
  • Faster Switching: Enables faster switching speeds for improved performance.

Additional Details

Key specifications include drain-source voltage (VDS), gate-source voltage (VGS), drain current (ID), on-resistance (RDS(on)), and total gate charge (Qg). Consult the official Microsemi datasheet for precise values. SiC MOSFETs offer significant advantages over silicon MOSFETs in terms of switching speed, efficiency, and thermal performance, making them ideal for demanding high-power applications. The APT12045L2VFR excels in applications requiring high voltage, high current, and fast switching speeds.

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