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Same model may have multiple batches, images only for reference.
AO3421L Real Image
Same model may have multiple batches, images only for reference.

AO3421L

Part No AO3421L
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog FETs - Single
Description P-Channel Enhancement Mode Field Effect Transistor | MOSFET P-CH 30V 2.6A SOT23-3
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Bulk
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 2.6A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 130mOhm at 2.6A, 10V
Gate Source Voltage(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 9nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 370pF at 15V
Power Dissipation (Maximum) 1.4W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package SOT-23-3L
Manufacturer Package TO-236-3, SC-59, SOT-23-3
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 722174-AO3421L
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AO3421L CAD Model

Description

The AO3421L is a P-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc.

  • Product Category: Discrete Semiconductor
  • Package: SOT-23-3L
  • Drive Voltage: 4.5V, 10V
  • Vds - Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 2.6A
  • Maximum Rds On: 130mOhm @ 2.6A, 10V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 9nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 370pF @ 15V
  • Status: Obsolete
  • Operating Temperature Range: -55°C ~ 150°C
  • Power Dissipation (maximum): 1.4W

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