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Same model may have multiple batches, images only for reference.
AO4435L_102 Real Image
Same model may have multiple batches, images only for reference.

AO4435L_102

Part No AO4435L_102
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 10.5A 8SOIC
Datasheet
AO4435L_102 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 10.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 20V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 24nC @ 10V
Max Input Capacitance 1400pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 3.1W (Ta)
Maximum Rds On at Id,Vgs 14 mOhm @ 11A, 20V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 100033-AO4435L_102
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AO4435L_102 CAD Model

Description

Product Description

The AO4435L_102 is a P-Channel MOSFET with advanced features tailored for efficient load management. Its design highlights include a low threshold voltage and low on-state resistance, perfect for innovative electronic solutions.

Applications

  • Load management systems
  • Telecommunication equipment
  • Energy-efficient lighting
  • Safety and security systems

Features and Benefits

  • Low threshold voltage: Enhances control sensitivity and responsiveness.
  • Low on-state resistance: Minimizes energy loss and maximizes efficiency.
  • Optimized for performance: Provides reliable functionality in critical applications.

Additional Details: The AO4435L_102 is crafted for new-age electronic devices requiring both precision and energy efficiency, making it a versatile solution.

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