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AO4884L_001

Part No AO4884L_001
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 40V 10A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel package
Part Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain Source Voltage 40V
Current - Continuous Drain (Id) @ 25°C 10A
Rds On (Maximum) @ Id, Vgs 13 mOhm @ 10A, 10V
Vgs(th) (Maximum) @ Id 2.7V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 33nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1950pF @ 20V
Power - Max 2W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package 8-SOIC (0.154", 3.90mm Width)
Manufacturer Package 8-SO
Win Source Part Number 768539-AO4884L_001
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian AO4884L_001 CAD Model

Description

The AO4884L is a P-Channel MOSFET from Alpha & Omega Semiconductor. It is designed for use in various power management and switching applications. This MOSFET features a low on-resistance, which minimizes power loss and improves efficiency. The '_001' likely denotes a specific revision or production lot.

Applications:

  • Load Switching
  • Power Management in Portable Devices
  • Battery Management Systems
  • DC-DC Converters
  • Power Adapters

Features:

  • Low On-Resistance (RDS(on)): Minimizes power loss and improves efficiency.
  • Low Gate Charge (Qg): Reduces switching losses.
  • High Avalanche Energy (EAS): Provides robustness against inductive loads.
  • Logic Level Gate Drive: Allows direct control from microcontrollers and other logic devices.
  • RoHS Compliant: Compliant with Restriction of Hazardous Substances directive.
  • Halogen-Free: Free from halogenated substances.

Benefits:

  • Increased Efficiency: Low on-resistance reduces power dissipation.
  • Reduced Switching Losses: Low gate charge improves switching performance.
  • Improved Reliability: High avalanche energy provides robustness.
  • Simplified Circuit Design: Logic level gate drive simplifies interfacing with control circuits.
  • Environmentally Friendly: RoHS compliant and Halogen-Free.

Additional Details:

The AO4884L is typically available in a SO-8 package. Key specifications include a drain-source voltage (VDS) rating of -30V, a continuous drain current (ID) rating that varies depending on the operating temperature and package, and a gate-source voltage (VGS) rating of ±20V. The typical RDS(on) is very low, enhancing efficiency. This MOSFET is suitable for applications needing efficient power switching and load management.

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