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Same model may have multiple batches, images only for reference.
AOD2HC60 Alpha & Omega Semiconductor Inc.
Same model may have multiple batches, images only for reference.

AOD2HC60

Part No AOD2HC60
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 2.5A TO252
Datasheet
AOD2HC60 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 10nC @ 10V
Max Input Capacitance 466pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 74W (Tc)
Maximum Rds On at Id,Vgs 2 Ohm @ 800mA, 10V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1016915-AOD2HC60
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AOD2HC60 CAD Model

Description

The Alpha & Omega Semiconductor Inc. MOSFET is a high-performance N-Channel power MOSFET designed for use in a wide range of applications.

  • Manufacturer: Alpha & Omega Semiconductor Inc.
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current @ 25°C: 2.5A (Tc)
  • Operating Temperature: -50°C to 150°C (TJ)
  • Power Dissipation: 74W (Tc)
  • Package: TO-252, (D-Pak)
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 10nC @ 10V
  • Maximum Input Capacitance: 466pF @ 100V
  • Product Status: Active
  • Packaging: Reel - TR
  • Commonly Used In: Discrete Semiconductor Products

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