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AOD2N60

Part No AOD2N60
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 2A TO252
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 325pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 56.8W (Tc)
Maximum Rds On at Id,Vgs 4.4 Ohm @ 1A, 10V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 009790-AOD2N60
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AOD2N60 CAD Model

Description

AOD2N60 High Voltage MOSFET

This MOSFET, the AOD2N60, excels in high-voltage applications with a remarkable breakdown voltage capacity. It is tailored for use in electronic projects that require durability and efficiency over prolonged periods.

  • AC-DC power supplies
  • Battery management systems
  • Industrial equipment
  • Telecommunications

Features and Benefits:

  • High voltage tolerance for robust functionality
  • Low gate charge for faster switching
  • Rugged construction for extended lifespan in tough environments

The AOD2N60’s advanced features ensure minimal energy loss, making it an optimal choice for energy-efficient designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2939 $51.4325
415+ $0.2412 $100.0980
645+ $0.2337 $150.7365
885+ $0.2261 $200.0985
1,145+ $0.2186 $250.2970
1,535+ $0.1960 $300.8600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,330 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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