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AOD3N50

Part No AOD3N50
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 500V 2.8A 3-Pin(2+Tab) DPAK / MOSFET N-CH 500V 2.8A TO252
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 8nC @ 10V
Max Input Capacitance 331pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 57W (Tc)
Maximum Rds On at Id,Vgs 3 Ohm @ 1.5A, 10V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 009791-AOD3N50
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name AOD3N50
Introduction Date January 12, 2009
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2025
Ultra Librarian 3D Model Ultra Librarian AOD3N50 CAD Model

Description

AOD3N50 Power MOSFET

The AOD3N50 MOSFET is well-suited for projects demanding superior power delivery and management. With its high current and voltage capacity, it is an asset in large-scale electronic systems that require consistent performance.

  • Electric vehicles
  • HVAC systems
  • Heavy machinery
  • Data centers

Features and Benefits:

  • Optimized for high power density applications
  • Excellent thermal efficiency for stable operation
  • Streamlined design for space-saving applications

Choose the AOD3N50 for projects that necessitate high output and reliability, ensuring reduced downtime and maintenance.

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