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Same model may have multiple batches, images only for reference.
AOD409G
Same model may have multiple batches, images only for reference.

AOD409G

Part No AOD409G
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description P
Datasheet
AOD409G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Alpha & Omega Semiconductor Inc.
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2350 pF @ 30 V
Power Dissipation (Max) 6.2W (Ta), 60W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252 (DPAK)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number AOD40
Standard Package 2,500 pcs
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1045122-AOD409G
Ultra Librarian 3D Model Ultra Librarian AOD409G CAD Model

Description

The MOSFET is a high-performance P-Channel FET designed for discrete semiconductor applications manufactured by Alpha & Omega Semiconductor Inc.

  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id) @ 25°C: 9A
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 30V
  • Package: TO-252-3, DPak
  • Mounting: Surface Mounting
  • Status: Active product

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