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Same model may have multiple batches, images only for reference.
AOD9N52 Alpha & Omega Semiconductor Inc.
Same model may have multiple batches, images only for reference.

AOD9N52

Part No AOD9N52
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Alpha & Omega Semiconductor Inc.
Package Bulk
Product Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 860mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1160 pF @ 25 V
Power Dissipation (Max) 178W
Temperature Range - Operating -50°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252 (DPAK)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number AOD9
Standard Package 1 pcs
REACH Status REACH Unaffected
Win Source Part Number 562249-AOD9N52
Ultra Librarian 3D Model Ultra Librarian AOD9N52 CAD Model

Description

The AOD9N52 is a N-Channel MOSFET transistor designed for use in discrete semiconductor products. It has a drain to source voltage (Vdss) of 500V, making it suitable for high voltage applications.

  • Type: N-Channel MOSFET
  • Vdss (Drain to Source Voltage): 500V
  • Id (Continuous Drain Current): 9A @ 25°C
  • Rds On (On-Resistance): 860mOhm @ 4.5A and 10V Vgs
  • Package: TO-252-3 (DPak), Surface Mountable
  • Gate Charge (Qg): 24nC @ 10V Vgs
  • Input Capacitance (Ciss): 1160pF @ 25V Vds
  • Operating Temperature Range: -50°C to 150°C
  • Status: Last Time Buy
  • Manufacturer: Alpha & Omega Semiconductor Inc.

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