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AOI4102

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Part No	AOI4102
Manufacturer	Alpha & Omega Semiconductor Inc.
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 30V 8A TO251A
Sample
Rohs State
ECAD Module
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Categories	Discrete Semiconductor Products
Manufacturer	Alpha & Omega Semiconductor Inc.
Packaging	Tube/Rail
Status	Obsolete(EOL)
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	30V
Continuous Drain Current at 25°C	8A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Gate-Source Threshold Voltage	3V @ 250μA
Max Gate Charge	8nC @ 10V
Max Input Capacitance	432pF @ 15V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	4.2W (Ta), 21W (Tc)
Maximum Rds On at Id,Vgs	37.5 mOhm @ 12A, 10V
Temperature Range - Operating	-55°C to 175°C (TJ)
Mounting	Through Hole
Case / Package	TO-251A
Dimension	TO-251-3 Stub Leads, IPak
Win Source Part Number	1016949-AOI4102
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian AOI4102 CAD Model

Alternative Products

Description

The Alpha & Omega Semiconductor Inc. MOSFET is a high-performance N-channel device designed for use in discrete semiconductor products.

Drain-Source Breakdown Voltage: 30V
Continuous Drain Current: 8A @ 25°C
Package: TO-251A
Power Dissipation: 4.2W (Ta), 21W (Tc)
Maximum Rds On @ Id,Vgs: 37.5 mOhm @ 12A, 10V
Gate-Source Threshold Voltage: 3V @ 250μA
Applications: Power Supplies, Motor Drives, and Lighting Systems

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