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Same model may have multiple batches, images only for reference.
AOM065V120X2Q
Same model may have multiple batches, images only for reference.

AOM065V120X2Q

Part No AOM065V120X2Q
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description 1200V SILICON CARBIDE MOSFET / N-Channel 1200 V 40.3A (Tc) 187.5W (Ta) Through Hole TO-247-4L
Datasheet
AOM065V120X2Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Alpha & Omega Semiconductor Inc.
Series Automotive, AEC-Q101
Package Tube
Product Status Active
FET Type N-Channel
Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 40.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 85mOhm @ 10A, 15V
Vgs(th) (Max) @ Id 3.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 62.3 nC @ 15 V
Vgs (Max) +15V, -5V
Input Capacitance (Ciss) (Max) @ Vds 1716 pF @ 800 V
FET Feature -
Power Dissipation (Max) 187.5W (Ta)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-4L
Package / Case TO-247-4
Base Product Number AOM065
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1354294-AOM065V120X2Q
Ultra Librarian 3D Model Ultra Librarian AOM065V120X2Q CAD Model

Description

The AOM065V120X2Q is a N-Channel SiC (Silicon Carbide Junction Transistor) MOSFET designed for automotive applications.

  • Vdss: 1200 V
  • Id @ 25°C: 40.3A
  • Vgs (Max): +15V and -5V
  • Vgs(th) @ 10mA: 3.5V
  • Rds On (Max) @ 10A, 15V: 85mOhm
  • Power Dissipation (Max): 187.5W
  • Package: TO-247-4
  • Mounting: Through-Hole
  • Series: Automotive, AEC-Q101
  • Manufacturer: Alpha & Omega Semiconductor Inc.
  • Status: Active
  • Temperature Range: -55°C to 175°C (TJ)

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