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Same model may have multiple batches, images only for reference.
AON6998 Real Image
Same model may have multiple batches, images only for reference.

AON6998

Part No AON6998
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 19A/26A DFN
Datasheet
AON6998 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual) Asymmetrical
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 19A, 26A
Maximum Rds On at Id,Vgs 5.2 mOhm @ 20A, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 820pF @ 15V
Maximum Power Dissipation 3.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-DFN-EP (5x6)
Win Source Part Number 1017117-AON6998
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AON6998 CAD Model

Description

The AON6998 from Alpha & Omega Semiconductor Inc. is a dual N-channel MOSFET.

  • Application: Discrete Semiconductor Products
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 19A, 26A
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Maximum Gate Charge: 13nC @ 10V
  • Package: 8-DFN-EP (5x6)
  • Power Dissipation: 3.1W
  • Operating Temperature: -55°C to 150°C (TJ)
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9196 $59.7740
155+ $0.7546 $116.9630
240+ $0.7310 $175.4400
330+ $0.7075 $233.4750
425+ $0.6839 $290.6575
570+ $0.6131 $349.4670
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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