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Same model may have multiple batches, images only for reference.
AON7702B Real Image
Same model may have multiple batches, images only for reference.

AON7702B

Part No AON7702B
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 13.5A 8DFN
Datasheet
AON7702B Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 13.5A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 24nC @ 10V
Max Input Capacitance 810pF @ 15V
Maximum Gate-Source Voltage ±20V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 3.1W (Ta), 23W (Tc)
Maximum Rds On at Id,Vgs 9.5 mOhm @ 13.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-DFN (3x3)
Dimension 8-PowerSMD, Flat Leads
Win Source Part Number 1017150-AON7702B
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AON7702B CAD Model

Description

The MOSFET from Alpha & Omega Semiconductor Inc. is a N-Channel polarity electronic component.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 13.5A (Ta), 20A (Tc)
  • FET Feature: Schottky Diode (Body)
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Rds On @ Id,Vgs: 9.5 mOhm @ 13.5A, 10V
  • Maximum Power Dissipation: 3.1W (Ta), 23W (Tc)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: 8-DFN (3x3)
  • Popularity: Medium

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