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Same model may have multiple batches, images only for reference.
IPW60R099CPFKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPW60R099CPFKSA1

Part No IPW60R099CPFKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 31A TO247-3  /  N-Channel 650 V 31A (Tc) 255W (Tc) Through Hole PG-TO247-3-1
Datasheet
IPW60R099CPFKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™
Package Tube
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 99mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 100 V
Power Dissipation (Max) 255W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-1
Package / Case TO-247-3
Base Product Number IPW60R099
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names IPW60R099CSX,IPW60R099CP,IPW60R099CPXK,SP000067147,IPW60R099CP-ND
Standard Package 30
Win Source Part Number 1219737-IPW60R099CPFKSA1
Ultra Librarian 3D Model Ultra Librarian IPW60R099CPFKSA1 CAD Model

Description

The IPW60R099CPFKSA1 is a N-channel MOSFET transistor from Infineon Technologies.

  • Series: CoolMOS™
  • Drain to Source Voltage: 650 V
  • Continuous Drain Current @ 25°C: 31A (Tc)
  • Rds On (Max) @ 18A, 10V: 99mOhm @ 18A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
  • Power Dissipation: 255W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Package Type: TO-247-3
  • Supplier Device Package: PG-TO247-3-1

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