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AOT12N30L

Part No AOT12N30L
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 300V 11.5A TO220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 300V
Continuous Drain Current at 25°C 11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 790pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 132W (Tc)
Maximum Rds On at Id,Vgs 420 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1017172-AOT12N30L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AOT12N30L CAD Model

Description

The Alpha & Omega Semiconductor Inc. AOT12N30L is a N-Channel MOSFET that is designed for use in Discrete Semiconductor Products.

  • Drain-Source Breakdown Voltage: 300V
  • Continuous Drain Current @ 25°C: 11.5A (Tc)
  • Power Dissipation (Max): 132W (Tc)
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Rds On @ Id,Vgs: 420 mOhm @ 6A, 10V
  • Case: TO-220
  • Mounting: through hole
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Input Capacitance: 790pF @ 25V
  • Supply and Demand: a balance of supply and demand.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7679 $53.7530
160+ $0.6301 $100.8160
250+ $0.6104 $152.6000
340+ $0.5907 $200.8380
440+ $0.5711 $251.2840
590+ $0.5120 $302.0800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,774 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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