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AOT12N65

Part No AOT12N65
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 12A TO220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 48nC @ 10V
Max Input Capacitance 2150pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 278W (Tc)
Maximum Rds On at Id,Vgs 720 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 078190-AOT12N65
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian AOT12N65 CAD Model

Description

Features and Benefits:

  • High-speed switching
  • Low on-resistance
  • Robust Avalanche Ruggedness
  • Tight VGS threshold range

Applications:

  • Switching power supplies
  • AC/DC converters
  • Motor control circuits
  • Battery management systems

The AOT12N65 is a high-performance N-channel MOSFET designed for efficient power management. Its low on-resistance and high-speed switching capabilities make it suitable for a variety of power supply and conversion applications. The device's robust avalanche ruggedness ensures reliability in demanding environments.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $18.6198 $74.4792
8+ $15.2772 $122.2176
12+ $14.8002 $177.6024
17+ $14.3220 $243.4740
21+ $13.8450 $290.7450
28+ $12.4128 $347.5584
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,100 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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