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BUK7675-100A,118

Part No BUK7675-100A,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 23A D2PAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Input Capacitance 1210pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 99W (Tc)
Maximum Rds On at Id,Vgs 75 mOhm @ 13A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1025291-BUK7675-100A,118
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUK7675-100A,118 CAD Model

Description

The Nexperia USA Inc. BUK7675-100A,118 is an N-Channel MOSFET with a Drain-Source Breakdown Voltage of 100V and a continuous drain current @ 25°C of 23A (Tc).

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 23A (Tc)
  • Maximum Rds On @ Id,Vgs: 75 mOhm @ 13A, 10V
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 1210pF @ 25V
  • Power Dissipation (Max): 99W (Tc)
  • Package: D2PAK case / package
  • Suitable for Use in: a variety of electronic applications
  • Temperature Range: -55°C to 175°C (TJ).

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.2289 $62.2890
23+ $5.1120 $117.5760
35+ $4.9515 $173.3025
49+ $4.7921 $234.8129
63+ $4.6327 $291.8601
84+ $4.1534 $348.8856
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Prices are subject to market and will be confirmed after the order is placed.
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Availability: 20,400 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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