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Same model may have multiple batches, images only for reference.
AOU4N60 Real Image
Same model may have multiple batches, images only for reference.

AOU4N60

Part No AOU4N60
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 4A TO251
Datasheet
AOU4N60 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 14.5nC @ 10V
Max Input Capacitance 640pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 104W (Tc)
Maximum Rds On at Id,Vgs 2.3 Ohm @ 2A, 10V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-251-3
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1017294-AOU4N60
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AOU4N60 CAD Model

Description

The 1017294-AOU4N60 is a N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 4A (Tc)
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Input Capacitance: 640pF @ 25V
  • Packaging: TO-251-3
  • Operating Temperature Range: -50°C to 150°C
  • Maximum Power Dissipation: 104W (Tc)
  • Maximum Gate Charge: 14.5nC @ 10V
  • Application: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6622 $59.5980
215+ $0.5433 $116.8095
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455+ $0.5094 $231.7770
590+ $0.4924 $290.5160
785+ $0.4414 $346.4990
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Availability: 24,400 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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