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Same model may have multiple batches, images only for reference.
AOW11S60 Real Image
Same model may have multiple batches, images only for reference.

AOW11S60

Part No AOW11S60
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11A TO262
Datasheet
AOW11S60 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.1V @ 250μA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 545pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 178W (Tc)
Maximum Rds On at Id,Vgs 399 mOhm @ 3.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1017303-AOW11S60
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AOW11S60 CAD Model

Description

The Alpha & Omega Semiconductor Inc. MOSFET is a N-Channel power transistor with a drain-source breakdown voltage of 600V and a continuous drain current of 11A.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 11A
  • Maximum Power Dissipation: 178W
  • Package: TO-262
  • Mounting Type: Through Hole
  • Gate-Source Threshold Voltage: 4.1V @ 250μA
  • Maximum Gate Charge: 11nC @ 10V
  • Maximum Input Capacitance: 545pF @ 100V
  • Maximum Rds On: 399 mOhm @ 3.8A, 10V

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