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Same model may have multiple batches, images only for reference.
AOW4S60 Alpha & Omega Semiconductor Inc.
Same model may have multiple batches, images only for reference.

AOW4S60

Part No AOW4S60
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 4A TO262
Datasheet
AOW4S60 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.1V @ 250μA
Max Gate Charge 6nC @ 10V
Max Input Capacitance 263pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 900 mOhm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1017318-AOW4S60
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AOW4S60 CAD Model

Description

The AOW4S60 from Alpha & Omega Semiconductor Inc. is a N-channel MOSFET designed for use in discrete semiconductor products.

  • Manufacturer: Alpha & Omega Semiconductor Inc.
  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 4A (Tc)
  • Gate-Source Threshold Voltage: 4.1V @ 250μA
  • Gate Charge: 6nC @ 10V
  • Package: TO-262
  • Operating Temperature: -55°C to 150°C (TJ)
  • Power Dissipation: 83W (Tc)
  • Rds On: 900 mOhm @ 2A, 10V
  • Popularity: Medium
  • Supply and Demand: Balanced

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