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AOWF11N70

Part No AOWF11N70
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 700V 11A TO262F
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 700V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 2150pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 28W (Tc)
Maximum Rds On at Id,Vgs 870 mOhm @ 5.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1017324-AOWF11N70
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AOWF11N70 CAD Model

Description

The AOWF11N70 is an N-channel MOSFET from Alpha & Omega Semiconductor Inc. with a power dissipation of 28W (Tc) and a drain-source breakdown voltage of 700V.

  • Manufacturer: Alpha & Omega Semiconductor Inc.
  • Channel Type: N-channel
  • Power Dissipation: 28W (Tc)
  • Drain-Source Breakdown Voltage: 700V
  • Continuous Drain Current: 11A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate Charge: 45nC @ 10V
  • Maximum Input Capacitance: 2150pF @ 25V
  • Maximum Rds On @ Id,Vgs: 870 mOhm @ 5.5A, 10V
  • Drive Voltage: 10V
  • Mounting: Through-Hole
  • Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Category: Discrete Semiconductor Products
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7348 $60.7180
85+ $1.4241 $121.0485
130+ $1.3791 $179.2830
175+ $1.3352 $233.6600
225+ $1.2901 $290.2725
300+ $1.1573 $347.1900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,500 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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