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AOWF12N65

Part No AOWF12N65
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 12A TO262F
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 48nC @ 10V
Max Input Capacitance 2150pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 28W (Tc)
Maximum Rds On at Id,Vgs 720 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 199120-AOWF12N65
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AOWF12N65 CAD Model

Description

Product Overview

The AOWF12N65 is a high-performance N-channel MOSFET known for its efficiency and reliability in various electronic applications. Designed to handle high voltages and currents, this MOSFET is ideal for demanding environments.

Features and Benefits

  • High voltage and current handling capacity
  • Low on-resistance for reduced power loss
  • Fast switching speed
  • Rugged and reliable performance

Applications

  • Power converters
  • Motor control circuits
  • Switch mode power supplies (SMPS)
  • Inverters

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4553 $50.9355
85+ $1.1941 $101.4985
130+ $1.1568 $150.3840
180+ $1.1195 $201.5100
235+ $1.0821 $254.2935
310+ $0.9702 $300.7620
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 40 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?

Shipping Information

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