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24C02N-SI27

Part No 24C02N-SI27
Manufacturer Atmel
Sample
Rohs State Need to verify
ECAD Module
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Reference Date Code 03+
Reference case SOP8
Manufacturer Atmel
Manufacturer Homepage www.atmel.com
RoHS State Request Verification
Win Source Part Number 736160-24C02N-SI27
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 24C02N-SI27 CAD Model

Description

The Atmel 24C02N-SI27 is a 2 Kbit Electrically Erasable Programmable Read-Only Memory (EEPROM), organized as 256 words of 8 bits each. This device is fabricated using Atmel's advanced CMOS technology, offering low power consumption and reliable data storage.

Applications

  • Serial presence detect (SPD) in memory modules
  • Storage of configuration data in embedded systems
  • Consumer electronics, such as TVs and set-top boxes
  • Industrial control systems
  • Automotive applications (e.g., storing calibration data)

Features

  • Low-voltage operation: 1.8V to 5.5V
  • 2-wire serial interface: I2C compatible
  • Write protect feature for hardware and software data protection
  • High reliability: 1 million erase/write cycles
  • Data retention: 100 years
  • Self-timed write cycle: 5ms typical
  • Page write mode allows up to 8 bytes to be written in a single write cycle
  • Schmitt trigger, filtered inputs for noise suppression
  • Available in various package options including SOIC, TSSOP, and DIP

Benefits

  • Non-volatile storage ensures data is retained even when power is removed.
  • I2C interface simplifies integration with microcontrollers.
  • Low power consumption makes it suitable for battery-powered devices.
  • High endurance and data retention provide long-term reliability.
  • Write protection prevents accidental data corruption.

Technical Specifications

The 24C02N-SI27 operates over a temperature range of -40°C to +85°C. It supports the standard I2C protocol with clock frequencies up to 400 kHz. The device typically consumes less than 1mA during active operation and less than 1µA in standby mode. The memory array is organized as 256 x 8 bits. It is available in an 8-lead SOIC package. Write cycle time is typically 5ms, and the device supports both byte write and page write modes.

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