The BS616LV4016EI-55 is a high-speed, low-voltage 4M-bit static RAM (SRAM) manufactured by Brilliance Semiconductor. It is organized as 256K x 16 bits and designed for memory applications requiring fast access times and low power consumption. The “-55” indicates a typical access time of 55ns.

Applications:

• Embedded systems
• Cache memory
• Networking equipment
• Industrial control systems
• Medical devices

Features:

• Fast access time: 55ns
• Low voltage operation: typically 3.3V
• Operating Current: (manufacturer datasheet needed for specific current draw)
• TTL-compatible inputs and outputs
• Available in various package options (e.g., TSOP)
• Data retention capability

Benefits:

• High-speed data access for improved system performance.
• Low power consumption ideal for battery-powered devices.
• Easy integration with other digital components.
• Reliable data storage.
• Wide operating temperature range for versatile deployment.

Additional Details:

The BS616LV4016EI-55 typically features separate data input and output lines. It operates within a specific temperature range (industrial or commercial grades depending on the exact version). Consult the datasheet for detailed electrical characteristics, timing diagrams, and pin configurations. The package is likely a TSOP (Thin Small Outline Package) but needs verification via the datasheet.