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2SC5195

Part No 2SC5195
Manufacturer CEL
Catalog RF Transistors (BJT)
Description TRANS NPN 2GHZ SMD
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer CEL
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 6V
Frequency - Transition 5GHz
Noise Figure (dB Typ @ f) 1.7dB to 2.5dB @ 2GHz
Maximum Power Dissipation 125mW
Typical Gain (hFE) (Min) 80 @ 3mA, 1V
Maximum Current Collector 100mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 3-SuperMiniMold (19)
Win Source Part Number 4898-2SC5195
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SC5195 CAD Model

Description

2SC5195 Transistor Description

The 2SC5195 is a high-performance NPN bipolar junction transistor that is widely recognized for its reliability and efficiency in various electronic applications. This device is engineered to handle substantial current loads, making it a suitable choice for applications demanding high power and excellent linearity.

Features and Benefits

  • High Power Capacity: The 2SC5195 can handle significant power levels, ensuring optimal performance in demanding circuits.
  • Durable Construction: Built with robust materials, this transistor offers longevity, reducing the need for frequent replacements.
  • Linear Operation: Designed for excellent linearity, it is perfect for applications requiring precise signal amplification.

Applications

  • Audio Amplifiers
  • Radio Frequency Amplifiers
  • Switching Circuits
  • Power Supplies
  • Industrial Equipment

Additional Details

With its robust design and high performance, the 2SC5195 is a go-to solution for engineers looking to improve the efficiency and reliability of their projects. Its capability to handle high power levels makes it an ideal choice for demanding applications in both industrial and consumer electronics.

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