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Same model may have multiple batches, images only for reference.
2SC5509-T2-A Real Image
Same model may have multiple batches, images only for reference.

2SC5509-T2-A

Part No 2SC5509-T2-A
Manufacturer CEL
Catalog RF Transistors (BJT)
Description RF TRANSISTOR NPN SOT-343F
Datasheet
2SC5509-T2-A Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer CEL
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 3.3V
Frequency - Transition 15GHz
Noise Figure (dB Typ @ f) 1.2dB @ 2GHz
Gain 14dB
Maximum Power Dissipation 190mW
Typical Gain (hFE) (Min) 50 @ 10mA, 2V
Maximum Current Collector 100mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-343
Win Source Part Number 1004462-2SC5509-T2-A
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2SC5509-T2-A CAD Model

Description

The CEL 1004462-2SC5509-T2-A is an NPN transistor with a collector-emitter breakdown voltage of 3.3V.

  • Collector-Emitter Breakdown Voltage: 3.3V
  • Typical Gain: 50 @ 10mA and 2V
  • Maximum Gain: 14dB
  • Frequency Transition: 15GHz
  • Noise Figure: 1.2dB @ 2GHz
  • Package: SOT-343
  • Maximum Current Collector: 100mA
  • Maximum Power Dissipation: 190mW
  • Status: Obsolete (EOL)
  • Popularity: Medium

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Quantity Unit Price Ext. Price
180+ $0.3269 $58.8420
435+ $0.2680 $116.5800
670+ $0.2599 $174.1330
920+ $0.2518 $231.6560
1,185+ $0.2437 $288.7845
1,590+ $0.2183 $347.0970
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