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Same model may have multiple batches, images only for reference.
NE58219-T1-A Real Image
Same model may have multiple batches, images only for reference.

NE58219-T1-A

Part No NE58219-T1-A
Manufacturer CEL
Catalog RF Transistors (BJT)
Description TRANSISTOR BIPOLAR .9GHZ 3-SMINI
Datasheet
NE58219-T1-A Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer CEL
Packaging Cut Reel
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Frequency - Transition 5GHz
Maximum Power Dissipation 100mW
Typical Gain (hFE) (Min) 60 @ 5mA, 5V
Maximum Current Collector 60mA
Temperature Range - Operating 125°C (TJ)
Mounting SMD (SMT)
Case / Package 3-SuperMiniMold (19)
Win Source Part Number 115264-NE58219-T1-A
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NE58219-T1-A CAD Model

Description

The NE58219-T1-A from CEL is a high-frequency NPN transistor.

  • Component Type: NPN Transistor
  • Manufacturer: CEL
  • Package: Cut Reel
  • Transition Frequency: 5GHz
  • Maximum Collector Current: 60mA
  • Maximum Collector-Emitter Breakdown Voltage: 12V
  • Typical Gain: 60 @ 5mA and 5V
  • Temperature Range: 125°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0668 $58.6740
135+ $0.8754 $118.1790
205+ $0.8480 $173.8400
285+ $0.8207 $233.8995
365+ $0.7933 $289.5545
490+ $0.7112 $348.4880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,970 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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