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Same model may have multiple batches, images only for reference.
NE687M03-T1-A
Same model may have multiple batches, images only for reference.

NE687M03-T1-A

Part No NE687M03-T1-A
Manufacturer CEL
Catalog RF Transistors (BJT)
Description TRANSISTOR NPN 2GHZ MINIMOLD
Datasheet
NE687M03-T1-A Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer CEL
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 3V
Frequency - Transition 14GHz
Noise Figure (dB Typ @ f) 1.3dB to 2dB @ 2GHz
Maximum Power Dissipation 90mW
Typical Gain (hFE) (Min) 70 @ 20mA, 2V
Maximum Current Collector 30mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 3-SuperMiniMold (M03)
Win Source Part Number 1082927-NE687M03-T1-A
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NE687M03-T1-A CAD Model

Description

The NE687M03-T1-A is a high-frequency NPN transistor suitable for use in various RF applications.

  • Transition Frequency: 14GHz
  • Noise Figure: 1.3dB to 2dB @ 2GHz
  • Package: 3-SuperMiniMold (M03)
  • Operating Temperature: 150°C
  • Maximum Collector Current: 30mA
  • Maximum Collector-Emitter Breakdown Voltage: 3V
  • Typical Gain (hFE): 70 @ 20mA and 2V
  • Maximum Power Dissipation: 90mW
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand: Balance

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