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Same model may have multiple batches, images only for reference.
UPA810T-T1-A Real Image
Same model may have multiple batches, images only for reference.

UPA810T-T1-A

Part No UPA810T-T1-A
Manufacturer CEL
Catalog RF Transistors (BJT)
Description RF DUAL TRANSISTORS NPN SOT-363
Datasheet
UPA810T-T1-A Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer CEL
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 2 NPN (Dual)
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Frequency - Transition 4.5GHz
Noise Figure (dB Typ @ f) 1.2dB @ 1GHz
Gain 9dB
Maximum Power Dissipation 200mW
Typical Gain (hFE) (Min) 70 @ 7mA, 3V
Maximum Current Collector 100mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-363
Win Source Part Number 102152-UPA810T-T1-A
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UPA810T-T1-A CAD Model

Description

The CEL UPA810T-T1-A is a dual NPN transistor with a gain of 9dB and a frequency transition of 4.5GHz.

  • Collector-Emitter Breakdown Voltage: 12V
  • Maximum Current Collector: 100mA
  • Package: Surface-mount package of SOT-363
  • Noise Figure: 1.2dB @ 1GHz
  • Typical Gain: 70 @ 7mA and 3V
  • Maximum Power Dissipation: 200mW
  • Device Status: Obsolete (EOL)
  • Operating Temperature Range: Up to 150°C (TJ)

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