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Same model may have multiple batches, images only for reference.
2N3706
Same model may have multiple batches, images only for reference.

2N3706

Part No 2N3706
Manufacturer Central Semiconductor Corp
Catalog RF Transistors (BJT)
Description Bipolar Transistor NPN Amplifier/Switch 20V 800mA 3-Pin TO-92 Through Hole Box
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-92
Collector Base Voltage (VCBO) 40 V
Collector Emitter Voltage (VCEO) 20 V
Element Configuration Single
Emitter Base Voltage (VEBO) -5 V
Gain Bandwidth Product 100 MHz
hFE Min 30
Max Collector Current 800 mA
Maximum Operating Temperature 150 °C
Max Power Dissipation 625 mW
Min Operating Temperature -65 °C
Packaging Bulk
Polarity NPN
RoHS Compliant
Win Source Part Number 1001080-2N3706
Categories RF Transistors(BJT)
Manufacturer Central Semiconductor Corp
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2N3706 CAD Model

Description

The 2N3706 is a low power, high gain NPN bipolar junction transistor from Central Semiconductor Corp.

  • Gain Bandwidth Product: 100 MHz
  • Maximum Collector Current: 800mA
  • Case/Package: TO-92
  • Suitable for: RF applications
  • Maximum Operating Temperature: 150°C
  • Minimum Operating Temperature: -65°C
  • Collector-Base Voltage (VCBO): 40V
  • Collector-Emitter Voltage (VCEO): 20V
  • Emitter-Base Voltage (VEBO): -5V
  • Package: Bulk
  • Polarity: NPN
  • Suitable for: Low power RF amplification and oscillation circuits

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3217 $57.9060
440+ $0.2640 $116.1600
680+ $0.2557 $173.8760
935+ $0.2476 $231.5060
1,210+ $0.2392 $289.4320
1,620+ $0.2145 $347.4900
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Availability: 487 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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