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Same model may have multiple batches, images only for reference.
CMLDM8120G TR Real Image
Same model may have multiple batches, images only for reference.

CMLDM8120G TR

Part No CMLDM8120G TR
Manufacturer Central Semiconductor Corp
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 0.86A SOT563
Datasheet
CMLDM8120G TR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Central Semiconductor Corp
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 860mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 3.56nC @ 4.5V
Max Input Capacitance 200pF @ 16V
Maximum Gate-Source Voltage 8V
Power Dissipation (Max) 350mW (Ta)
Maximum Rds On at Id,Vgs 150 mOhm @ 950mA, 4.5V
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-563
Dimension SOT-563, SOT-666
Win Source Part Number 1029614-CMLDM8120G TR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian CMLDM8120G TR CAD Model

Description

The CMLDM8120G TR is a MOSFET type electronic component manufactured by Central Semiconductor Corp.

  • Polarity: P-Channel
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 860mA (Ta)
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Technology: MOSFET
  • Maximum Rds on @ Id, Vgs: 150 mOhm @ 950mA, 4.5V
  • Mounting Type: SMD (SMT)
  • Drive Voltage: 1.8V, 4.5V
  • Power Dissipation (Max): 350mW (Ta)
  • Category: Discrete Semiconductor Products
  • Status: Active
  • Case/Package: SOT-563 and SOT-666
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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