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Same model may have multiple batches, images only for reference.
MPQ3906 Central Semiconductor Corp
Same model may have multiple batches, images only for reference.

MPQ3906

Part No MPQ3906
Manufacturer Central Semiconductor Corp
Catalog Transistors (BJT) - Arrays
Description TRANS 4PNP 40V 0.2A
Datasheet
MPQ3906 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Central Semiconductor Corp
Packaging Tube/Rail
Status Active
Transistor Polarity 4 PNP (Quad)
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 250mV @ 1mA, 10mA
Collector Cut-off Current(Max) 50nA (ICBO)
Typical Gain (hFE) (Min) 75 @ 10mA, 1V
Maximum Power Dissipation 500mW
Frequency - Transition 200MHz
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-116
Win Source Part Number 044995-MPQ3906
Ultra Librarian 3D Model Ultra Librarian MPQ3906 CAD Model

Description

The Central Semiconductor Corp 044995-MPQ3906 is a 4 PNP (Quad) transistor with a maximum collector-emitter breakdown voltage of 40V.

  • Transistor Type: 4 PNP (Quad)
  • Maximum Collector-Emitter Breakdown Voltage: 40V
  • Maximum Current Collector: 200mA
  • Frequency Transition: 200MHz
  • Case/Package: TO-116
  • Temperature Range: -65°C to 150°C (TJ)
  • Collector Cut-Off Current (Max): 50nA (ICBO)
  • Typical Gain (hFE) (Min): 75 @ 10mA, 1V
  • Maximum Power Dissipation: 500mW
  • Maximum Vce (sat): 250mV @ 1mA, 10mA

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