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C2M0080120D

Part No C2M0080120D
Manufacturer Cree/Wolfspeed
Catalog Transistors - FETs, MOSFETs - RF
Description SICFET N-CH 1200V 36A TO247-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Cree/Wolfspeed
Series C2M™
Package Bulk
Product Status Not For New Designs
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 98mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 5 V
Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 950 pF @ 1000 V
Power Dissipation (Max) 192W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Base Product Number C2M0080120
Standard Package 30 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 575721-C2M0080120D
Ultra Librarian 3D Model Ultra Librarian C2M0080120D CAD Model

Description

The C2M™ SiCFET (Silicon Carbide) N-Channel FET by Cree/Wolfspeed is a high-performance electronic component designed for use in discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 1200V
  • Continuous Drain Current (Id): 36A
  • On-Resistance (Rds On): 98mOhm
  • Gate Charge (Qg): 62nC
  • Mounting: Through-Hole

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $30.5598 $61.1196
4+ $25.0747 $100.2988
7+ $24.2911 $170.0377
9+ $23.5075 $211.5675
12+ $22.7239 $272.6868
15+ $20.3732 $305.5980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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