C3M0065100K

Part No C3M0065100K
Manufacturer Cree/Wolfspeed
Catalog Transistors - FETs, MOSFETs - RF
Description SICFET N-CH 1000V 35A TO247-4L / N-Channel 1000 V 35A (Tc) 113.5W (Tc) Through Hole TO-247-4L
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Wolfspeed, Inc.
Packaging Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 78mOhm @ 20A, 15V
Vgs(th) (Max) @ Id 3.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 15 V
Vgs (Max) +19V, -8V
Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 600 V
Power Dissipation (Max) 113.5W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package TO-247-4L
Case / Package TO-247-4
Base Product Number C3M0065100
RoHS Status RoHS Compliant
MSL Level Not Applicable
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
Win Source Part Number 1324544-C3M0065100K

Description

The Wolfspeed C3M0065100K is a SiCFET (Silicon Carbide) N-Channel FET with a drain to source voltage (Vdss) of 1000 V. It can handle a continuous drain current (Id) of 35A (Tc) and has a maximum Rds On of 78mOhm @ 20A, 15V. The gate charge (Qg) (Max) @ Vgs is 35 nC @ 15 V and the input capacitance (Ciss) (Max) @ Vds is 660 pF @ 600 V. The device is packaged in a TO-247-4L package and can operate in a temperature range of -55°C ~ 150°C (TJ). This SiCFET is ideal for use in applications that require high voltage and high current, such as electric vehicles, renewable energy systems, and industrial motor drives.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
2+ $27.4647 $54.9294
5+ $22.5352 $112.6760
7+ $21.8310 $152.8170
10+ $21.1267 $211.2670
13+ $20.4225 $265.4925
17+ $18.3098 $311.2666
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Availability: 479 pieces
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