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Same model may have multiple batches, images only for reference.
C3M0065100K Real Image
Same model may have multiple batches, images only for reference.

C3M0065100K

Part No C3M0065100K
Manufacturer Cree/Wolfspeed
Catalog Transistors - FETs, MOSFETs - RF
Description SICFET N-CH 1000V 35A TO247-4L / N-Channel 1000 V 35A (Tc) 113.5W (Tc) Through Hole TO-247-4L
Datasheet
C3M0065100K Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Wolfspeed, Inc.
Packaging Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 78mOhm @ 20A, 15V
Vgs(th) (Max) @ Id 3.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 15 V
Vgs (Max) +19V, -8V
Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 600 V
Power Dissipation (Max) 113.5W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package TO-247-4L
Case / Package TO-247-4
Base Product Number C3M0065100
RoHS Status RoHS Compliant
MSL Level Not Applicable
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
Win Source Part Number 1324544-C3M0065100K
Ultra Librarian 3D Model Ultra Librarian C3M0065100K CAD Model

Description

The Wolfspeed C3M0065100K is a SiCFET (Silicon Carbide) N-Channel FET with a drain to source voltage (Vdss) of 1000 V.

  • Drain to Source Voltage (Vdss): 1000 V
  • Continuous Drain Current (Id): 35A (Tc)
  • Maximum Rds On: 78mOhm @ 20A, 15V
  • Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
  • Package: TO-247-4L
  • Temperature Range: -55°C ~ 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $31.7218 $63.4436
5+ $26.0282 $130.1410
7+ $25.2148 $176.5036
10+ $24.4014 $244.0140
13+ $23.5880 $306.6440
17+ $21.1478 $359.5126
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