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CY14V104NA-BA25XIT

Part No CY14V104NA-BA25XIT
Manufacturer Cypress Semiconductor Corp
Catalog IT infrastructure Memory
Description nvSRAM 256Kbx16
Sample
Rohs State rohs
ECAD Module
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Category IT infrastructure Memory
Win Source Part Number 1455504-CY14V104NA-BA25XIT
Manufacturer Cypress Semiconductor Corp
Package Tape & Reel (TR)
Product Status Active
Memory Type Non-Volatile
Memory Format NVSRAM
Technology NVSRAM (Non-Volatile SRAM)
Memory Size 4Mbit
Memory Organization 256K x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 25ns
Access Time 25ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Grade -
Mounting Type Surface Mount
Package / Case 48-TFBGA
Supplier Device Package 48-FBGA (6x10)
Ultra Librarian 3D Model Ultra Librarian CY14V104NA-BA25XIT CAD Model

Description

The CY14V104NA-BA25XIT is a high-capacity Static RAM (SRAM) memory chip developed by Cypress, now part of Infineon Technologies AG following the acquisition. This nvSRAM (non-volatile SRAM) component offers a storage capacity of 256Kbx16, providing robust data retention and quick access speeds. Its non-volatile nature means that it retains stored information even in the absence of power, making it an ideal solution for critical data storage in applications requiring data persistence, such as in embedded systems, industrial automation, and automotive electronics. With advanced features such as instant non-volatility, high endurance, and low power operation, the CY14V104NA-BA25XIT ensures reliable storage and fast access to crucial data, significantly improving system reliability and performance.

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Shipping Information

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