The CY15B104QN-50SXIES is a 4-Mbit (512 K x 8) nonvolatile static random access memory (nvSRAM) from Cypress Semiconductor. This device combines the fast access speeds of SRAM with the nonvolatile data storage of shadow EEPROM. It's designed for applications requiring continuous data logging, high-speed data capture, and reliable data retention in the event of power loss. The '50' likely indicates an access time of 50 ns.

Applications

• Data Logging: Continuously records data in industrial control systems, medical devices, and automotive applications.
• Metering: Used in smart meters to store energy consumption data.
• Industrial Control: Stores critical parameters and settings in programmable logic controllers (PLCs) and other industrial equipment.
• Networking: Used in routers and switches for storing configuration data and routing tables.
• Medical Devices: Stores patient data and configuration settings in medical instruments.

Features

• Memory Size: 4 Mbit (512 K x 8), providing ample storage capacity.
• Nonvolatile: Data is automatically retained in EEPROM upon power loss.
• Fast Access Time: 50 ns, enabling high-speed data access.
• Unlimited Endurance: SRAM cells offer virtually unlimited read/write cycles.
• Automatic Store on Power-Down: Data is automatically transferred from SRAM to EEPROM when power is lost.
• Operating Voltage: Typically operates at 3.0V or 3.3V.
• RoHS Compliant: Meets environmental standards for hazardous substances.

Benefits

• Data Security: Nonvolatile storage ensures data retention during power outages, preventing data loss.
• High Performance: Fast access times enable high-speed data logging and retrieval.
• Long Lifespan: Unlimited SRAM endurance ensures long-term reliability.
• Easy Integration: Standard SRAM interface simplifies integration into existing systems.
• Reduced System Complexity: Eliminates the need for external battery backup systems.

Additional Details

The CY15B104QN-50SXIES is typically available in a QFN (Quad Flat No-leads) package. It is commonly used in applications where data integrity and reliability are paramount. The device features automatic store operations, triggered by a power-down event, which transfers the SRAM data to the nonvolatile EEPROM. The operating temperature range is typically -40°C to +85°C. Detailed electrical characteristics, timing diagrams, and package dimensions can be found in the Cypress Semiconductor datasheet. This nvSRAM is a cost-effective solution for applications requiring both high-speed performance and nonvolatile data storage.