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S29GL512T11DHIV23 Real Image
Same model may have multiple batches, images only for reference.

S29GL512T11DHIV23

Part No S29GL512T11DHIV23
Manufacturer Cypress Semiconductor Corp
Catalog Unclassified Memory
Description IC FLASH 512MBIT PARALLEL 64FBGA  /  FLASH - NOR Memory IC 512Mb (64M x 8) Parallel 110 ns 64-FBGA (9x9)
Datasheet
S29GL512T11DHIV23 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs)>Memory
Mfr Cypress Semiconductor Corp
Series GL-T
Package Tape & Reel (TR)
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 512Mb (64M x 8)
Memory Interface Parallel
Write Cycle Time - Word, Page 60ns
Access Time 110 ns
Voltage - Supply 1.65V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting SMD (SMT)
Package / Case 64-LBGA
Supplier Device Package 64-FBGA (9x9)
Base Product Number S29GL512
Standard Package 2,200
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B1A
HTSUS 8542.32.0071
Win Source Part Number 1254808-S29GL512T11DHIV23
Ultra Librarian 3D Model Ultra Librarian S29GL512T11DHIV23 CAD Model

Description

The S29GL512T11DHIV23 is a 512Mb (64M x 8) non-volatile FLASH - NOR memory integrated circuit from Cypress Semiconductor Corp, which operates with a supply voltage of 1.65V ~ 3.6V and has an access time of 110 ns.

  • Package: 64-LBGA
  • Temperature Range: -40°C to 85°C (TA)
  • Application Use: in various applications such as automotive, industrial, and consumer electronics
  • Memory Interface: parallel
  • Write Cycle Times: word and page write cycle times of 60ns
  • REACH: REACH unaffected
  • ECCN: 3A991B1A

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12+ $11.6969 $140.3628
18+ $11.3314 $203.9652
24+ $10.9658 $263.1792
31+ $10.6002 $328.6062
41+ $9.5038 $389.6558
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